The green source color devices are made of InGaN on
Substrate light emitting diode
Electrical/optical characteristics at Ta = 25°C
Forward voltage: VF 3.0 3.2V, IF = 20mA
Reverse current: IR uA VR = 5V
Nominate wavelength: λd 515 to 520nm IF = 20mA
Maximum ratings: Ta = 25°C
Power dissipation: 105mW
DC forward current: 30mA
Peak forward current (1): IFP 100mA
Reverse voltage: 5V
Electrostatic discharge: ESD 1,000V
Operating temperature: -40 to 85°C
Storage temperature: -40 to 100 °C
Size: 3.0 x 2.0 x 1.3mm
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